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Results 1-4 of 4 (Search time: 0.002 seconds).

1

Conduction mechanism under quasibreakdown of ultrathin gate oxide

He, YD; Guan, H; Li, MF; Cho, Byung Jinresearcher; Dong, Z, APPLIED PHYSICS LETTERS, v.75, no.16, pp.2432 - 2434, 1999-10

2

Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Guan, H; Cho, Byung Jinresearcher; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05

3

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs

Guan, H; Li, MF; He, YD; Cho, Byung Jinresearcher; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08

4

Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs)

Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; Choi, KJ; Cho, Byung Jinresearcher; Lee, HD; Kirsch, P; Harris, HR; Tsai, W; Datta, S; Tseng, HH; Banerjee, SK; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09

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