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Results 1-6 of 6 (Search time: 0.002 seconds).

1

Conduction mechanism under quasibreakdown of ultrathin gate oxide

He, YD; Guan, H; Li, MF; Cho, Byung Jinresearcher; Dong, Z, APPLIED PHYSICS LETTERS, v.75, no.16, pp.2432 - 2434, 1999-10

2

Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000

3

Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Guan, H; Cho, Byung Jinresearcher; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05

4

Evolution of quasi-breakdown in thin gate oxides

Loh, WY; Cho, Byung Jinresearcher; Li, MF, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5302 - 5306, 2002-04

5

A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs

Guan, H; Li, MF; He, YD; Cho, Byung Jinresearcher; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08

6

Effect of substrate hot-carrier injection on quasibreakdown of ultrathin gate oxide

Cho, Byung Jinresearcher; Xu, Z; Guan, H; Li, MF, JOURNAL OF APPLIED PHYSICS, v.86, no.11, pp.6590 - 6592, 1999-12

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