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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors Kim SJ; Cho, Byung Jinresearcher; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07 |