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Results 1-3 of 3 (Search time: 0.002 seconds).

1

Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jinresearcher; Choi, WK; Yakovlev, N, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07

2

PVD HfO2 for high-precision MIM capacitor applications

Kim SJ; Cho, Byung Jinresearcher; Li MF; Yu XF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389, 2003-06

3

Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Kim SJ; Cho, Byung Jinresearcher; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07

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