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ArticleHafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation
Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04
ArticleOver-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer
Tan, YN; Chim, WK; Cho, Byung Jinresearcher; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07
ArticlePhysical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications
Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jinresearcher; Choi, WK; Yakovlev, N, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07