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Results 1-1 of 1 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

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