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Results 1-6 of 6 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide

He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11

2
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

3
Does short wavelength lithography process degrade the integrity of thin gate oxide?

Kim, SJ; Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000

4
Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000

5
Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4, 2000-12

6
Reliability of thin gate oxides irradiated under X-ray lithography conditions

Cho, Byung Jinresearcher; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04

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