Results 1-3 of 3 (Search time: 0.002 seconds).
|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide|
Guan, H; Cho, Byung Jinresearcher; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05
|2||Evolution of quasi-breakdown in thin gate oxides|
Loh, WY; Cho, Byung Jinresearcher; Li, MF, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5302 - 5306, 2002-04
|3||A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs|
Guan, H; Li, MF; He, YD; Cho, Byung Jinresearcher; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08