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|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Annealing behavior of gate oxide leakage current after quasi-breakdown|
Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000
|2||A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs|
Guan, H; Li, MF; He, YD; Cho, Byung Jinresearcher; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08