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Results 1-1 of 1 (Search time: 0.001 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000

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