Search

Start a new search
Current filters:
Add filters:
  • Results/Page
  • Sort items by
  • In order
  • Authors/record

Results 1-2 of 2 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000

2
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Guan, H; Cho, Byung Jinresearcher; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05

rss_1.0 rss_2.0 atom_1.0