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|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Annealing behavior of gate oxide leakage current after quasi-breakdown|
Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000
|2||Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide|
Guan, H; Cho, Byung Jinresearcher; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05