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|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Annealing behavior of gate oxide leakage current after quasi-breakdown|
Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000
|2||Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides|
Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4, 2000-12