Results 1-3 of 3 (Search time: 0.002 seconds).
|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance|
Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12
|2||Evolution of quasi-breakdown in thin gate oxides|
Loh, WY; Cho, Byung Jinresearcher; Li, MF, JOURNAL OF APPLIED PHYSICS, v.91, no.8, pp.5302 - 5306, 2002-04
|3||Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs)|
Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; Choi, KJ; Cho, Byung Jinresearcher; Lee, HD; Kirsch, P; Harris, HR; Tsai, W; Datta, S; Tseng, HH; Banerjee, SK; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09