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Results 1-2 of 2 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

Guan, H; Cho, Byung Jinresearcher; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05

2
A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs

Guan, H; Li, MF; He, YD; Cho, Byung Jinresearcher; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08

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