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Results 1-7 of 7 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric

Yeo, CC; Cho, Byung Jinresearcher; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO2/TaN gate stack

Gao, Fei; Lee, S. J.; Rui, Li; Cho, Byung Jinresearcher; Balakumar, S.; Tung, Chih-Hang; Chi, D. Z.; Kwong, D. L., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.7, pp.222 - 224, 2006-05

Effects of SiO2/Si3N4 hard masks on etching properties of metal gates

Hwang, WS; Cho, Byung Jinresearcher; Chan, DSH; Bliznetsov, V; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2689 - 2694, 2006-11

Correlation between optical properties and Si nanocrystal formation of Si-rich Si oxide films prepared by plasma-enhanced chemical vapor deposition

Chen, X. Y.; Lu, Y. F.; Wu, Y. H.; Cho, Byung Jinresearcher; Tang, L. J.; Lu, D.; Dong, J. R., APPLIED SURFACE SCIENCE, v.253, no.5, pp.2718 - 2726, 2006-12

Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications

Zhu, CX; Cho, Byung Jinresearcher; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03

Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

Joo, MS; Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05

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