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|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation|
Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04
|2||Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack|
Joo, MS; Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05