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Results 1-1 of 1 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

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