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Results 1-5 of 5 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jinresearcher; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12

Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09

Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Yeo, CC; Joo, MS; Cho, Byung Jinresearcher; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09

Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09

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