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Results 1-7 of 7 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

2
Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

3
Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09

4
Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

Joo, MS; Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05

5
Improvement of electrical properties of MOCVD HfO2 by multistep deposition

Yeo, CC; Cho, Byung Jinresearcher; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; Balasubramanian, N, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11

6
Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09

7
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

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