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Results 1-10 of 10 (Search time: 0.003 seconds).


A high performance MIM capacitor using HfO(2) dielectrics

Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jinresearcher; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09


Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10


Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11


Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon

Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; Cho, Byung Jinresearcher; Poon, CH, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05


Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Yeo, CC; Joo, MS; Cho, Byung Jinresearcher; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09


Thermally stable fully silicided Hf-silicide metal-gate electrode

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06


Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

Park, CS; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798, 2005-11


Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell

Pu, Jing; Kim, Sun-Jung; Kim, Young-Sun; Cho, Byung Jinresearcher, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.9, pp.252 - 254, 2008-06


Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF

Hwang, WS; Cho, Byung Jinresearcher; Chan, DSH; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.4, pp.1056 - 1061, 2007-07


Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei Yip; Mun, Hoe Keat; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.90, no.18, 2007-04

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