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Results 1-3 of 3 (Search time: 0.002 seconds).

1

Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide

He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11

2

Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11

3

Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant

He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06

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