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Results 1-10 of 11 (Search time: 0.002 seconds).

1

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Yu, M. B.; Lo, G. Q.; Kwong, D. L.; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.92, no.5, 2008-02

2

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Chua, K. T.; Yu, M. B.; Cho, Byung Jinresearcher; Lo, G. Q.; Kwong, D. -L., IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164, 2008-02

3

Demonstration of high-performance PMOSFETs using Si-SixGe1-x-Si quantum wells with high-kappa/metal-gate stacks

Majhi, P; Kalra, P; Harris, R; Choi, KJ; Heh, D; Oh, J; Kelly, D; Choi, R; Cho, Byung Jinresearcher; Banerjee, S; Tsai, W; Tseng, H; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.99 - 101, 2008-01

4

Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl-2

Hwang, Wan Sik; Cho, Byung Jinresearcher; Chan, Daniel S. H.; Lee, Sang Won; Yoo, Won Jong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.1, pp.H6 - H10, 2008

5

Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell

Pu, Jing; Kim, Sun-Jung; Kim, Young-Sun; Cho, Byung Jinresearcher, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.9, pp.252 - 254, 2008-06

6

Endurance reliability of multilevel-cell flash memory using a ZrO2/Si3N4 dual charge storage layer

Zhang, G; Hwang, WS; Lee, SH; Cho, Byung Jinresearcher; Yoo, WJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2361 - 2369, 2008-09

7

Metal carbides for band-edge work function metal gate CMOS devices

Hwang, WS; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474, 2008-09

8

Process and material properties of HfLaO(x) prepared by atomic layer deposition

He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jinresearcher, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08

9

Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

Pu, J; Kim, SJ; Lee, SH; Kim, YS; Kim, ST; Choi, KJ; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.688 - 690, 2008-07

10

Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs)

Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; Choi, KJ; Cho, Byung Jinresearcher; Lee, HD; Kirsch, P; Harris, HR; Tsai, W; Datta, S; Tseng, HH; Banerjee, SK; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09

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