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Results 1-7 of 7 (Search time: 0.003 seconds).

1

Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Lo, GQ; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11

2

Electron mobility enhancement using ultrathin pure Ge on Si substrate

Yeo, CC; Cho, Byung Jinresearcher; Gao, E; Lee, SJ; Lee, AH; Yu, CY; Liu, CW; Tang, LJ; Lee, TW, IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763, 2005-10

3

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

4

Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

Park, CS; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798, 2005-11

5

Dopant loss mechanism in n(+)/p germanium junctions during rapid thermal annealing

Poon, CH; Tan, LS; Cho, Byung Jinresearcher; Du, AY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.12, pp.895 - 899, 2005

6

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Kim, SJ; Cho, Byung Jinresearcher; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09

7

Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

Chen, XY; Lu, YF; Tang, LJ; Wu, YH; Cho, Byung Jinresearcher; Xu, XJ; Dong, JR; Song, WD, JOURNAL OF APPLIED PHYSICS, v.97, no.1, 2005-01

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