Results 1-2 of 2 (Search time: 0.003 seconds).
|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2|
Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09
|2||Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process|
Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09