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Results 1-7 of 7 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jinresearcher; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12

2
Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

3
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, Byung Jinresearcher; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

4
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

5
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

6
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jinresearcher; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12

7
Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Loh, WY; Cho, Byung Jinresearcher; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04

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