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|NO||Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)|
|1||Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application|
Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Lo, GQ; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11
|2||Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers|
Kim, SJ; Cho, Byung Jinresearcher; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09