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Results 1-7 of 7 (Search time: 0.003 seconds).

1

Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

2

A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02

3

Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Lo, GQ; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11

4

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Kim, SJ; Cho, Byung Jinresearcher; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09

5

MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB; Liu, XY; Winkler, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

6

RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

7

High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jinresearcher; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12

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