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Results 1-3 of 3 (Search time: 0.002 seconds).

1

Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

2

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

3

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

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