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Results 1-3 of 3 (Search time: 0.003 seconds).

1

MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

2

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

3

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09

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