Search

Start a new search
Current filters:
Add filters:
  • Results/Page
  • Sort items by
  • In order
  • Authors/record

Results 1-5 of 5 (Search time: 0.002 seconds).

1

MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

2

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

3

Thermally stable fully silicided Hf-silicide metal-gate electrode

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06

4

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09

5

MOS characteristics of substituted Al gate on high-kappa dielectric

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11

rss_1.0 rss_2.0 atom_1.0