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Results 1-8 of 8 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) Altmetrics
1
Article
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics

Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jinresearcher; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10

2
Article
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02

3
Article
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

4
Article
MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB; Liu, XY; Winkler, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

5
Article
Improvement of electrical properties of MOCVD HfO2 by multistep deposition

Yeo, CC; Cho, Byung Jinresearcher; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; Balasubramanian, N, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11

6
Article
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

7
Article
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jinresearcher; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12

8
Article
Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Loh, WY; Cho, Byung Jinresearcher; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04

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