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Results 1-10 of 18 (Search time: 0.004 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl-2

Hwang, Wan Sik; Cho, Byung Jinresearcher; Chan, Daniel S. H.; Lee, Sang Won; Yoo, Won Jong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.1, pp.H6 - H10, 2008

2
Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Hwang, Wan Sik; Remskar, Maja; Yan, Rusen; Kosel, Tom; Park, Jong Kyung; Cho, Byung Jinresearcher; Haensch, Wilfried; Xing, Huili (Grace); Seabaugh, Alan; Jena, Debdeep, APPLIED PHYSICS LETTERS, v.102, no.4, 2013-01

3
Resistance analysis and device design guideline for graphene RF transistors

Hong, Seul Ki; Jeon, Sang Chul; Hwang, Wan Sik; Cho, Byung Jinresearcher, 2D MATERIALS, v.2, no.3, 2015-07

4
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyuresearcher; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10

5
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Seo, Yujin; Lee, Tae In; Ahn, Hyunjun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245, 2017-10

6
H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; Choi, Rino; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09

7
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; Yu, Hyun-Young; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04

8
Novel Vapor-Phase Synthesis of Flexible, Homogeneous Organic-Inorganic Hybrid Gate Dielectric with sub 5 nm Equivalent Oxide Thickness

김민주; Pak, Kwanyong; Hwang, Wan Sik; Im, Sung Gapresearcher; Cho, Byung Jinresearcher, ACS APPLIED MATERIALS & INTERFACES, v.10, no.43, pp.37326 - 37334, 2018-10

9
Mechanical Stability Analysis via Neutral Mechanical Plane for High-Performance Flexible Si Nanomembrane FDSOI Device

Kim, Seung-Yoon; Bong, Jae Hoon; Kim, Cheolgyu; Hwang, Wan Sik; Kim, Taek-Sooresearcher; Cho, Byung Jinresearcher, ADVANCED MATERIALS INTERFACES, v.4, no.21, 2017-11

10
Impedance Spectroscopy Analysis and Equivalent Circuit Modeling of Graphene Oxide Solutions

Yoon, Youngbin; Jo, Jeonghoo; Kim, Seungdu; Lee, In Gyu; Cho, Byung Jinresearcher; Shin, Myunghun; Hwang, Wan Sik, NANOMATERIALS, v.7, no.12, 2017-12

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