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Results 1-3 of 3 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; Choi, Rino; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09

2
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; Yu, Hyun-Young; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04

3
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jinresearcher, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04

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