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Results 1-5 of 5 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) Altmetrics
1
Article
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Seo, Yujin; Lee, Tae In; Ahn, Hyunjun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245, 2017-10

2
Article
H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; Choi, Rino; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09

3
Article
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; Yu, Hyun-Young; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04

4
Article
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jinresearcher, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04

5
Article
Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06

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