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Results 1-10 of 15 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si

Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jinresearcher; Kwong, DL; Tung, CH; Pan, JS; Chai, JW; Wang, WD; Chi, DZ; Ang, CH; Zheng, JZ; Ramanathan, S, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11

2
Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jinresearcher, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04

3
Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

Lek, CM; Cho, Byung Jinresearcher; Ang, CH; Tan, SS; Loh, WY; Zhen, JZ; Lap, C, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28, 2002-06

4
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Ang, CH; Ling, CH; Cho, Byung Jinresearcher; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11

5
Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4, 2000-12

6
A comparative study of radiation- and stress-induced leakage currents in thin gate oxides

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.15, no.10, pp.961 - 964, 2000-10

7
Reliability of thin gate oxides irradiated under X-ray lithography conditions

Cho, Byung Jinresearcher; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822, 2001-04

8
Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jinresearcher; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09

9
Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jinresearcher, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.2872 - 2876, 2000-09

10
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12

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