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Results 1-10 of 10 (Search time: 0.003 seconds).

1

MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

2

A high performance MIM capacitor using HfO(2) dielectrics

Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jinresearcher; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09

3

Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

4

Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

Kim, SJ; Cho, Byung Jinresearcher; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08

5

Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

Park, CS; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798, 2005-11

6

Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant

He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06

7

Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications

Zhu, CX; Cho, Byung Jinresearcher; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03

8

Tensile-strained germanium CMOS integration on silicon

Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12

9

MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB; Liu, XY; Winkler, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

10

MOS characteristics of substituted Al gate on high-kappa dielectric

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11

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