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Results 1-9 of 9 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
Dirac voltage tunability by Hf1-xLaxO gate dielectric composition modulation for graphene field effect devices

Oh, Joong Gun; Shin, Yunsang; Shin, Woo Cheol; Sul, Onejae; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.99, no.19, 2011-11

Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Yu, M. B.; Lo, G. Q.; Kwong, D. L.; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.92, no.5, 2008-02

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09

Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices

Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei-Yip; Mun, Hoe Keat; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837, 2007-08

Process and material properties of HfLaO(x) prepared by atomic layer deposition

He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jinresearcher, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08

Dependence of chemical composition ratio on electrical properties of HfO2-A(2)O(3) gate dielectric

Joo MS; Cho, Byung Jinresearcher; Yeo CC; Wu N; Yu HY; Zhu CX; Li MF; Kwong DL; Balasubramanian N, JAPANESE JOURNAL OF APPLIED PHYSICS, v.42, no.3A, pp.220 - 222, 2003-03

Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition

Chen, XY; Lu, YF; Wu, YH; Cho, Byung Jinresearcher; Yang, BJ; Liew, TYF, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.22, no.4, pp.1731 - 1737, 2004

Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient

Chen, XY; Lu, YF; Wu, YH; Cho, Byung Jinresearcher; Liu, MH; Dai, DY; Song, WD, JOURNAL OF APPLIED PHYSICS, v.93, no.10, pp.6311 - 6319, 2003-05

Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

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