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Results 1-7 of 7 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Hot-carrier lifetime dependence on channel width and silicon recess depth in N-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure

Chim, WK; Cho, Byung Jinresearcher; Yue, JMP, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.1, pp.47 - 53, 2002-01

2
Tensile-strained germanium CMOS integration on silicon

Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12

3
Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei Yip; Mun, Hoe Keat; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.90, no.18, 2007-04

4
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03

5
H-2 High Pressure Annealed Y-Doped ZrO2 Gate Dielectric With an EOT of 0.57 nm for Ge MOSFETs

Lee, Tae In; Manh-Cuong Nguyen; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Hwang, Wan Sik; Yu, Hyun-Young; Choi, Rino; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1350 - 1353, 2019-09

6
Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; Yu, Hyun-Young; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04

7
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jinresearcher, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04

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