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Results 1-7 of 7 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

2
Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12

3
Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

Lek, CM; Cho, Byung Jinresearcher; Ang, CH; Tan, SS; Loh, WY; Zhen, JZ; Lap, C, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28, 2002-06

4
Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

Ang, CH; Ling, CH; Cheng, ZY; Cho, Byung Jinresearcher; Kim, SJ, JOURNAL OF APPLIED PHYSICS, v.88, no.5, pp.3087 - 3089, 2000-09

5
Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.147, no.12, pp.4676 - 4682, 2000-12

6
Negative bias temperature instability on plasma-nitrided silicon dioxide film

Ang, CH; Lek, CM; Tan, SS; Cho, Byung Jinresearcher; Chen, TP; Lin, WH; Zhen, JZ, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.41, no.3B, pp.314 - 316, 2002-03

7
Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.39, no.7B, pp.757 - 759, 2000-07

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