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Results 1-6 of 6 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

2
Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment

Lee, Jae Jin; Shin, Yunsang; Choi, Juyun; Kim, Hyoungsub; Hyun, Sangjin; Choi, Siyoung; Cho, Byung Jinresearcher; Lee, Seok-Heeresearcher, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441, 2012-11

3
PVD HfO2 for high-precision MIM capacitor applications

Kim SJ; Cho, Byung Jinresearcher; Li MF; Yu XF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389, 2003-06

4
Tensile-strained germanium CMOS integration on silicon

Zang, H; Loh, WY; Ye, JD; Lo, GQ; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.28, no.12, pp.1117 - 1119, 2007-12

5
Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film

Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09

6
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Kim SJ; Cho, Byung Jinresearcher; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07

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