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Results 1-10 of 20 (Search time: 0.004 seconds).

1

Electromagnetic interference shielding effectiveness of monolayer graphene

Hong, Seul Ki; Kim, Ki Yeong; Kim, Taek Yong; Kim, Jong Hoon; Park, Seong Wook; Kim, Joung Horesearcher; Cho, Byung Jinresearcher, NANOTECHNOLOGY, v.23, no.45, 2012-11

2

Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jinresearcher, NANO LETTERS, v.12, no.8, pp.3887 - 3892, 2012-08

3

Carboxylic Group as the Origin of Electrical Performance Degradation during the Transfer Process of CVD Growth Graphene

Hong, Seul Ki; Song, Seung Min; Sul, Onejae; Cho, Byung Jinresearcher, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.4, pp.K107 - K109, 2012-02

4

High-Performance MIM Capacitors Using HfLaO-Based Dielectrics

Zhang, Lu; He, Wei; Chan, Daniel S. H.; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.17 - 19, 2010-01

5

Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

Shin, Woo Cheol; Kim, Taek Yong; Sul, Onejae; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.101, no.3, 2012-07

6

Analysis on switching mechanism of graphene oxide resistive memory device

Hong, Seul Ki; Kim, Ji Eun; Kim, Sang Oukresearcher; Cho, Byung Jinresearcher, JOURNAL OF APPLIED PHYSICS, v.110, no.4, 2011-08

7

A high performance MIM capacitor using HfO(2) dielectrics

Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jinresearcher; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09

8

Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

9

Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11

10

Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon

Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; Cho, Byung Jinresearcher; Poon, CH, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05

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