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Results 1-10 of 10 (Search time: 0.003 seconds).

1

Border-trap characterization in high-kappa strained-si MOSFETs

Maji, Debabrata; Duttagupta, S. P.; Rao, V. Rarngopal; Yeo, Chia Ching; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.28, no.8, pp.731 - 733, 2007-08

2

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04

3

Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer

Tan, YN; Chim, WK; Cho, Byung Jinresearcher; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07

4

Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

5

Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Lo, GQ; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11

6

Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jinresearcher; Choi, WK; Yakovlev, N, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07

7

Effects of SiO2/Si3N4 hard masks on etching properties of metal gates

Hwang, WS; Cho, Byung Jinresearcher; Chan, DSH; Bliznetsov, V; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2689 - 2694, 2006-11

8

PVD HfO2 for high-precision MIM capacitor applications

Kim SJ; Cho, Byung Jinresearcher; Li MF; Yu XF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389, 2003-06

9

Atomic layer deposited high-kappa films and their role in metal-insulator-metal capacitors for Si RF/analog integrated circuit applications

Zhu, CX; Cho, Byung Jinresearcher; Li, MF, CHEMICAL VAPOR DEPOSITION, v.12, no.2-3, pp.165 - 171, 2006-03

10

Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Kim SJ; Cho, Byung Jinresearcher; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07

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