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Results 1-7 of 7 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

2
Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jinresearcher, NANO LETTERS, v.12, no.8, pp.3887 - 3892, 2012-08

3
Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment

Lee, Jae Jin; Shin, Yunsang; Choi, Juyun; Kim, Hyoungsub; Hyun, Sangjin; Choi, Siyoung; Cho, Byung Jinresearcher; Lee, Seok-Heeresearcher, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441, 2012-11

4
Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jinresearcher; Choi, WK; Yakovlev, N, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07

5
Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF

Hwang, WS; Cho, Byung Jinresearcher; Chan, DSH; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.4, pp.1056 - 1061, 2007-07

6
Impact of Inter layer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

Chandramohan, S.; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; Kim, Taek Yong; Cho, Byung Jinresearcher; Suh, Eun-Kyung; Hong, Chang-Hee, ACS APPLIED MATERIALS & INTERFACES, v.5, no.3, pp.958 - 964, 2013-02

7
Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei Yip; Mun, Hoe Keat; Cho, Byung Jinresearcher, APPLIED PHYSICS LETTERS, v.90, no.18, 2007-04

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