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Results 1-10 of 16 (Search time: 0.003 seconds).

1

Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

2

Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jinresearcher; Lo, GQ; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11

3

Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

Kim, SJ; Cho, Byung Jinresearcher; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08

4

Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Ang, CH; Ling, CH; Cho, Byung Jinresearcher; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11

5

Does short wavelength lithography process degrade the integrity of thin gate oxide?

Kim, SJ; Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000

6

Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Kim, SJ; Cho, Byung Jinresearcher; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09

7

Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

Pu, J; Kim, SJ; Lee, SH; Kim, YS; Kim, ST; Choi, KJ; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.688 - 690, 2008-07

8

Bias and thermal annealings of radiation-induced leakage currents in thin-gate oxides

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.47, no.6, pp.2764 - 4, 2000-12

9

A comparative study of radiation- and stress-induced leakage currents in thin gate oxides

Ang, CH; Ling, CH; Cheng, ZY; Kim, SJ; Cho, Byung Jinresearcher, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.15, no.10, pp.961 - 964, 2000-10

10

RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

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