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Results 1-10 of 16 (Search time: 0.003 seconds).

1

Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04

2

Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jinresearcher; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12

3

Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

4

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

5

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09

6

Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Yeo, CC; Joo, MS; Cho, Byung Jinresearcher; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09

7

Does short wavelength lithography process degrade the integrity of thin gate oxide?

Kim, SJ; Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000

8

Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

Joo, MS; Park, CS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05

9

Electron-beam irradiation-induced gate oxide degradation

Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Joo, MS; Yeo, IS, JOURNAL OF APPLIED PHYSICS, v.88, no.11, pp.6731 - 6735, 2000-12

10

Improvement of electrical properties of MOCVD HfO2 by multistep deposition

Yeo, CC; Cho, Byung Jinresearcher; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; Balasubramanian, N, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11

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