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Results 1-10 of 13 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) Altmetrics
1
Article
Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jinresearcher; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12

2
Article
Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

3
Article
Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11

4
Article
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, Byung Jinresearcher; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

5
Article
Effects of SiO2/Si3N4 hard masks on etching properties of metal gates

Hwang, WS; Cho, Byung Jinresearcher; Chan, DSH; Bliznetsov, V; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2689 - 2694, 2006-11

6
Article
Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF

Hwang, WS; Cho, Byung Jinresearcher; Chan, DSH; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.4, pp.1056 - 1061, 2007-07

7
Article
Metal carbides for band-edge work function metal gate CMOS devices

Hwang, WS; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474, 2008-09

8
Article
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

9
Article
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure

Yue, JMP; Chim, WK; Cho, Byung Jinresearcher; Chan, DSH; Qin, WH; Kim, YB; Jang, SA; Yeo, IS, IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132, 2000-03

10
Article
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jinresearcher; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; Balasubramanian, N; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

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