Search

Start a new search
Current filters:
Add filters:
  • Results/Page
  • Sort items by
  • In order
  • Authors/record

Results 61-70 of 185 (Search time: 0.003 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
61
Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity

Cho, Byung Jinresearcher; Ko, LH; Nga, YA; Chan, LH, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.146, no.11, pp.4259 - 4262, 1999-11

62
Isolation process induced wafer warpage

Jang, SA; Yeo, IS; Kim, YB; Cho, Byung Jinresearcher; Lee, SK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.1, no.1, pp.46 - 48, 1998-07

63
DEVELOPMENT OF A HEXAGONAL-SHAPED RAPID THERMAL PROCESSOR USING A VERTICAL TUBE

Cho, Byung Jinresearcher; VANDENABEELE, P; MAEX, K, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, v.7, no.3, pp.345 - 353, 1994-08

64
Demonstration of high-performance PMOSFETs using Si-SixGe1-x-Si quantum wells with high-kappa/metal-gate stacks

Majhi, P; Kalra, P; Harris, R; Choi, KJ; Heh, D; Oh, J; Kelly, D; Choi, R; Cho, Byung Jinresearcher; Banerjee, S; Tsai, W; Tseng, H; Jammy, R, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.99 - 101, 2008-01

65
Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl-2

Hwang, Wan Sik; Cho, Byung Jinresearcher; Chan, Daniel S. H.; Lee, Sang Won; Yoo, Won Jong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.1, pp.H6 - H10, 2008

66
Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning

Park, CS; Cho, Byung Jinresearcher, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.796 - 798, 2005-11

67
Dopant loss mechanism in n(+)/p germanium junctions during rapid thermal annealing

Poon, CH; Tan, LS; Cho, Byung Jinresearcher; Du, AY, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.12, pp.895 - 899, 2005

68
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

Ang, CH; Ling, CH; Cho, Byung Jinresearcher; Kim, SJ; Cheng, ZY, SOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007, 2000-11

69
Does short wavelength lithography process degrade the integrity of thin gate oxide?

Kim, SJ; Cho, Byung Jinresearcher; Chong, PF; Chor, EF; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613, 2000

70
Annealing behavior of gate oxide leakage current after quasi-breakdown

Xu, Z; Cho, Byung Jinresearcher; Li, MF, MICROELECTRONICS RELIABILITY, v.40, pp.1341 - 1346, 2000

rss_1.0 rss_2.0 atom_1.0