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Results 51-60 of 185 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
51
Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon

Zeng, YP; Lu, YF; Shen, ZX; Sun, WX; Yu, T; Liu, L; Zeng, JN; Cho, Byung Jinresearcher; Poon, CH, NANOTECHNOLOGY, v.15, no.5, pp.658 - 662, 2004-05

52
Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jinresearcher, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09

53
Effect of annealing on the composition and structure of HfO2 and nitrogen-incorporated HfO2

Yeo, CC; Joo, MS; Cho, Byung Jinresearcher; Whang, SJ, THIN SOLID FILMS, v.462, pp.90 - 95, 2004-09

54
P-type floating gate for retention and P/E window improvement of flash memory devices

Shen, Chen; Pu, Jing; Li, Ming-Fu; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1910 - 1917, 2007-08

55
Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

Kim, SJ; Cho, Byung Jinresearcher; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08

56
Thermally stable fully silicided Hf-silicide metal-gate electrode

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06

57
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; Cho, Byung Jinresearcher; Chin, A; Kwong, DL; Du, AY; Tung, CH; Balasubramanian, N, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

58
ELIMINATION OF SLIPS ON SILICON-WAFER EDGE IN RAPID THERMAL-PROCESS BY USING A RING OXIDE

Cho, Byung Jinresearcher; Kim, Choong Ki, JOURNAL OF APPLIED PHYSICS, v.67, no.12, pp.7583 - 7586, 1990-06

59
Role of hole fluence in gate oxide breakdown

Li, MF; He, YD; Ma, SG; Cho, Byung Jinresearcher; Lo, KF; Xu, MZ, IEEE ELECTRON DEVICE LETTERS, v.20, no.11, pp.586 - 588, 1999-11

60
Conduction mechanism under quasibreakdown of ultrathin gate oxide

He, YD; Guan, H; Li, MF; Cho, Byung Jinresearcher; Dong, Z, APPLIED PHYSICS LETTERS, v.75, no.16, pp.2432 - 2434, 1999-10

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