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Results 41-50 of 185 (Search time: 0.003 seconds).

41

Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jinresearcher; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

42

Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier

Zang, H.; Lee, S. J.; Loh, W. Y.; Wang, J.; Chua, K. T.; Yu, M. B.; Cho, Byung Jinresearcher; Lo, G. Q.; Kwong, D. -L., IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164, 2008-02

43

Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide

He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11

44

Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si

Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jinresearcher; Kwong, DL; Tung, CH; Pan, JS; Chai, JW; Wang, WD; Chi, DZ; Ang, CH; Zheng, JZ; Ramanathan, S, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11

45

Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

Ang, CH; Tan, SS; Lek, CM; Lin, W; Zheng, ZJ; Chen, T; Cho, Byung Jinresearcher, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28, 2002-04

46

Laser annealing of silicon nanocrystal films formed by pulsed-laser deposition

Tan, CF; Chen, XY; Lu, YF; Wu, YH; Cho, Byung Jinresearcher; Zeng, JN, JOURNAL OF LASER APPLICATIONS, v.16, no.1, pp.40 - 45, 2004-02

47

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jinresearcher; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

48

Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jinresearcher; Choi, WK; Yakovlev, N, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07

49

Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11

50

Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs

Lek, CM; Cho, Byung Jinresearcher; Ang, CH; Tan, SS; Loh, WY; Zhen, JZ; Lap, C, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.17, no.6, pp.25 - 28, 2002-06

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