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Results 21-30 of 183 (Search time: 0.003 seconds).


Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer

Tan, YN; Chim, WK; Cho, Byung Jinresearcher; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07


Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics

Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jinresearcher; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10


Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jinresearcher; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12


Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

Poon, CH; Cho, Byung Jinresearcher; Lu, YF; Bhat, M; See, A, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.21, no.2, pp.706 - 709, 2003


Correlation between interface traps and gate oxide leakage current in the direct tunneling regime

Loh, WY; Cho, Byung Jinresearcher; Li, MF, APPLIED PHYSICS LETTERS, v.81, no.2, pp.379 - 381, 2002-07


A high performance MIM capacitor using HfO(2) dielectrics

Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jinresearcher; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09


Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation

Chen, XY; Lu, YF; Cho, Byung Jinresearcher; Zeng, YP; Zeng, JN; Wu, YH, APPLIED PHYSICS LETTERS, v.81, no.7, pp.1344 - 1346, 2002-08


Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric

Yeo, CC; Cho, Byung Jinresearcher; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05


Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jinresearcher; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10


A MONOS-type flash memory using a high-k HfAlO charge trapping layer

Tan, YN; Chim, WK; Cho, Byung Jinresearcher; Choi, WK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.9, pp.198 - 200, 2004

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